NPA1020-DE

RF Amplifier by Nxbeam Inc (21 more products)

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The NPA1020-DE from Nxbeam is a GaN MMIC Amplifier that operates from 12.5 to 14.5 GHz. It delivers a saturated output power of 15 W with a linear gain of 25 dB and has a power-added-efficiency (PAE) of more than 40%. The amplifier is fabricated using 0.2 µm GaN HEMT on SiC technology. It requires a drain voltage from 20 to 28 V and draws a drain current of less than 1.3 A. The amplifier is impedance matched at 50 ohms with DC blocking capacitors for better system integration.

The NPA1020-DE is available as a die that measures 5.0 x 2.6 x 0.1 mm with gold bond pads and backside metallization for eutectic attachments. It is ideal for Ku-band SATCOM applications.

Product Specifications

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Product Details

  • Part Number
    NPA1020-DE
  • Manufacturer
    Nxbeam Inc
  • Description
    15 W GaN MMIC Amplifier from 12.5 to 14.5 GHz for Ku-band SATCOM Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die, IC/MMIC/SMT
  • Industry Application
    SATCOM
  • Frequency
    12.5 to 14.5 GHz
  • Power Gain
    23.9 to 24.4 dB
  • Small Signal Gain
    24 to 26.4 dB
  • Output Power
    41.9 to 42.4 dBm
  • Output Power
    15.49 to 17.38 W
  • Saturated Power
    41.9 to 42.4 dBm
  • Saturated Power
    15.48 to 17.37 W
  • PAE
    40 %
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    12 to 14 dB
  • Output Return Loss
    9 to 20 dB
  • Supply Voltage
    24 V
  • Current Consumption
    0.2 A
  • Transistor Technology
    GaN on SiC HEMT
  • Package Type
    Surface Mount
  • Dimensions
    5.0 x 2.6 x 0.1 mm

Technical Documents