NPA2040-DE

RF Amplifier by Nxbeam Inc (21 more products)

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The NPA2040-DE from Nxbeam is a Power Amplifier MMIC that operates from 27.5 to 31 GHz. It delivers a saturated output power of 10 W with a small signal gain of 24 dB and a power-added efficiency (PAE) of up to 32%. This power amplifier is manufactured using GaN-on-SiC technology and is fully passivated for reliable operation. It consists of fully-matched RF input and output ports with DC-blocking capacitors for easy system integration. This amplifier includes Au-based bond pads and backside metallization for compatibility with eutectic die attachment methods. It requires a DC supply from 20 to 28 V and consumes less than 140 mA of current.

The NPA2040-DE is available as a bare die that measures 3.675 x 1.375 x 0.100 mm and is ideal for point-to-point/multi-point digital radios, Ka-band satellite communications, and 5G infrastructure applications.

Product Specifications

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Product Details

  • Part Number
    NPA2040-DE
  • Manufacturer
    Nxbeam Inc
  • Description
    10 W GaN Power Amplifier MMIC from 27.5 to 31 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Satellite, 5G, Point-to-Multipoint, Point-to-Point
  • Industry Application
    SATCOM, Cellular, Broadcast
  • Frequency
    27 to 31 GHz
  • Power Gain
    18.6 to 19.6 dB
  • Small Signal Gain
    24 to 24.3 dB
  • Grade
    Commercial
  • Saturated Power
    35.1 to 36.2 dBm
  • Saturated Power
    3.23 to 4.16 W
  • Input Power
    20.5 dBm
  • PAE
    29 to 32 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    8 to 20 dB
  • Output Return Loss
    9 to 14 dB
  • Supply Voltage
    24 V
  • Current Consumption
    720 mA
  • Transistor Technology
    HEMT, GaN on SiC
  • Package Type
    Chip
  • Dimensions
    3.675 x 1.375 x 0.1 mm

Technical Documents