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The A3I35D025WN from NXP is an RF LDMOS amplifier that operates from 3200 to 4000 MHz. This multi-stage structure provides 3.4 watts of power with an efficiency of 17.3% and a gain of 28.9 dB. It requires a 28 V supply and covers all typical cellular base station modulation formats. The amplifier is matched to 50 ohms with DC blocking at the input and output ports. It is available in a surface mount plastic package and is ideal for digital predistortion error correction systems and Doherty applications.
12.5 W Power Amplifier from 6 to 18 GHz
Surface Mount GaAs Gain Block from 5 to 2000 MHz
76.4 W Surface Mount GaN Hybrid Power Amplifier from 2.7 to 3.1 GHz
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