The A3M34SL039 from NXP Semiconductors is a Doherty Power Amplifier that operates from 3300 to 3700 MHz. This LDMOS power amplifier is designed for TDD LTE and 5G systems and has an Autobias feature that allows overwriting production settings and automatically sets and regulates transistor bias over temperature upon power up. It delivers an output power of 47.9 dBm (~61 W) (@3 dB compression point) with a gain of 29.6 dB and a power-added efficiency of 37.1%. This amplifier is fully matched to 50 ohms at the input and output ports with DC blocking and has an I2C digital interface for communication. It also includes an integrated sensor for monitoring temperature and requires a DC supply from 24 to 30 V to operate.
The A3M34SL039 is available in a surface-mount package that measures 10 x 8 x 1.365 mm and is ideal for massive MIMO systems, outdoor small cells, and low-power remote radio head applications.
