The A5M34TG140-TC from NXP Semiconductors is a Doherty Power Amplifier Module that operates from 3300 to 3670 MHz. It is based on NXP's new top-side cooling technology that helps radio designers create thinner, lighter 5G radio units while reducing design and manufacturing complexities. This 8 W module series is designed for massive MIMO radios covering 3.3 GHz to 3.8 GHz — typically 32T32R (200 W) or 64T64R (320 W) radios. The amplifier modules combine NXP’s in-house LDMOS and GaN semiconductor technologies to enable high gain and efficiency with wideband performance.
This power amplifier module series is a 2-stage module that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier. This amplifier is designed for low-complexity digital linearization systems and has a thermal path that is separated from the electrical/solder connection path for enhanced thermal dissipation. It also has reduced memory effects for improved linearized error vector magnitude.
The A5M34TG140-TC requires a DC supply of 5 V and consumes less than 11.3 mA of current. It is available in a module that measures 14 x 10 mm and is ideal for massive MIMO systems, outdoor small cells, low-power remote radio heads, TDD LTE, and 5G system applications.
