The A5M35TG040-TC from NXP Semiconductors is a Doherty Power Amplifier that operates from 3400 to 3600 MHz. It is a 2-stage module that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier. The amplifier delivers a Pulsed CW power of 49.4 dBm(~87 W) with a gain of 30.5 dB and a power-added efficiency of 47.5%. 

This amplifier has reduced memory effects for improved linearized error vector magnitude and is designed for low-complexity digital linearization systems. It requires a DC supply of 5 V and consumes less than 11.3 mA of current.

The A5M35TG040-TC is available as a die that measures 14.0 x 10.0 x 1.97 mm and is ideal for massive MIMO systems, outdoor small cells, low-power remote radio heads, TDD LTE and 5G system applications.

Product Specifications

View similar products

Product Details

  • Part Number
    A5M35TG040-TC
  • Manufacturer
    NXP Semiconductors
  • Description
    87 W Doherty Power Amplifier from 3400 to 3600 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell
  • Standards Supported
    4G/LTE, 5G
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.4 to 3.6 GHz
  • Gain
    29 to 32.1 dB
  • Output Power
    10.5 W
  • Grade
    Commercial
  • PAE
    46.7 to 47.9 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    Doherty Amplifier, GaN Amplifier
  • Supply Voltage
    5 V, 48 V
  • Technology
    LDMOS and GaN-on-SiC
  • Package Type
    Surface Mount
  • Dimensions
    14.0 x 10.0 x 1.97 mm
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents