The A5M35TG140-TC from NXP Semiconductors is a Doherty Power Amplifier Module that operates from 3400 to 3600 MHz. It delivers an output power of 10.5 W with a gain of 30.5 dB and a power-added efficiency of 47.5%. This 2-stage power amplifier module has an LDMOS-based driver amplifier and a GaN final stage amplifier. It has an adjacent channel power ratio (ACPR) of -30.2 dBc and an AM/PM conversion of -18° (at P3dB). This amplifier has a thermal path that is separated from the electrical/solder connection path for enhanced thermal dissipation.

The A5M35TG140-TC has reduced memory effects for improved linearized error vector magnitude and is designed for low-complexity digital linearization systems. This amplifier requires a DC supply of 5 V or 48 V and consumes less than 11.3 mA. It is available in a module that measures 14 x 10 mm and is ideal for massive MIMO systems, outdoor small cells, low-power remote radio heads, TDD LTE, and 5G system applications.

Product Specifications

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Product Details

  • Part Number
    A5M35TG140-TC
  • Manufacturer
    NXP Semiconductors
  • Description
    10.5 W LDMOS + GaN Doherty Power Amplifier Module from 3.4 to 3.6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell
  • Standards Supported
    4G/LTE, 5G
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.4 to 3.6 GHz
  • Gain
    30.4 to 30.5 dB
  • Output Power
    10.5 W
  • Grade
    Commercial
  • PAE
    46.7 to 47.9 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    Doherty Amplifier, GaN Amplifier
  • Supply Voltage
    5 V, 48 V
  • Technology
    LDMOS and GaN-on-SiC
  • Package Type
    Surface Mount
  • Dimensions
    14mm x 10mm
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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