The A5M36TG140-TC from NXP Semiconductors is a Doherty Power Amplifier that operates from 3400 to 3800 MHz. This amplifier has been designed for wireless infrastructure applications that demand high performance in the smallest footprint. The amplifier is ideal for applications in massive MIMO systems, outdoor small cells, and low-power remote radio heads. It delivers an output power of 10 W with a gain of 31.2 dB and has a power-added efficiency of 46.9%. This fully-integrated amplifier is a 2−stage module that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier. It has a 10% duty cycle and an AM/PM conversion of -27° (P3dB). The amplifier has reduced memory effects for improved linearized error vector magnitude and is designed for low-complexity digital linearization systems.

The A5M36TG140-TC requires a DC supply of 5 / 48 V and consumes less than 11.3 mA of current. It has a thermal path that is separated from the electrical/solder connection path for enhanced thermal dissipation. It is available in a package that measures 14 x 10 mm and is designed for wireless infrastructure applications that demand high performance in the smallest footprint. This amplifier is ideal for massive MIMO systems, outdoor small cells, low-power remote radio heads, TDD LTE, and 5G systems applications.

Product Specifications

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Product Details

  • Part Number
    A5M36TG140-TC
  • Manufacturer
    NXP Semiconductors
  • Description
    10 W LDMOS + GaN Doherty Power Amplifier from 3.4 to 3.8 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell
  • Standards Supported
    4G/LTE, 5G
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.4 to 3.8 GHz
  • Gain
    31 to 31.2 dB
  • Output Power
    10 W
  • Grade
    Commercial
  • PAE
    42.9 to 46.9 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    Doherty Amplifier, GaN Amplifier
  • Supply Voltage
    5 V, 48 V
  • Technology
    LDMOS and GaN-on-SiC
  • Package Type
    Surface Mount
  • Dimensions
    14mm x 10mm
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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