1. everything RF
  2. RF Components
  3. Amplifiers
  4. NXP Semiconductors
  5. BGS8M2

The BGS8M2 from NXP Semiconductors is a RF Amplifier with Frequency 1805 to 2200 MHz, Gain 14.4 dB, Power Gain -4 to -0.6 dB(Bypass) / 11.2 to 16.5 dB, Noise Figure 0.80 to 1.5 dB, IP3 -3 to 4 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for BGS8M2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    BGS8M2
  • Manufacturer
    NXP Semiconductors
  • Description
    Low Noise Amplifier with bypass switch from 1805 to 2200 MHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Mobile, Communication
  • Standards Supported
    4G/LTE
  • Industry Application
    Cellular
  • Frequency
    1805 to 2200 MHz
  • Gain
    14.4 dB
  • Power Gain
    -4 to -0.6 dB(Bypass) / 11.2 to 16.5 dB
  • Noise Figure
    0.80 to 1.5 dB
  • IP3
    -3 to 4 dBm
  • Input Power
    26 dBm
  • Input Power
    0.39 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    23 to 25 dB
  • Input Return Loss
    5.5 to 12 dB
  • Output Return Loss
    9 to 12 dB
  • Supply Voltage
    1.5 to 3.1 V
  • Current Consumption
    0.001 to 7.8 mA
  • Technology
    SiGe:C
  • Package Type
    Surface Mount
  • Package
    SOT1232
  • Dimensions
    1.1 x 0.7 x 0.37 mm
  • Operating Temperature
    -40 to 85 Degree C (ambient temperature)
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Input P1dB : -12 to -2.5 dBm (input power at 1 dB), total power dissipation: 55 mW, turn-on time: 0.3 to 1.7 µs

Technical Documents
View details on the manufacturer's website
View similar products