The BTS6302U from NXP Semiconductors is a Pre-Driver Amplifier that operates from 2.3 to 5 GHz. It delivers a saturated output power of 27.9 dBm with a gain of over 35 dB and has a noise figure of less than 3.8 dB. This amplifier has fast on-off switching to support TDD systems and has an ACLR of -43 dBc for high-linearity performance. It requires a DC supply of 5 V and draws under 120 mA of current. The amplifier is available in a 16-terminal HVQFN package that measures 3.00 x 3.00 x 0.85 mm with ESD protection on all terminals. It is ideal for wireless infrastructure 5G NR MIMO, high linearity pre-driver, and TDD system applications.

Product Specifications

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Product Details

  • Part Number
    BTS6302U
  • Manufacturer
    NXP Semiconductors
  • Description
    High Linearity Pre-Driver Amplifier 2.3 to 5 GHz

General Parameters

  • Type
    Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    5G, TDD
  • Industry Application
    Wireless Infrastructure, Cellular
  • Frequency
    2.3 to 5 GHz
  • Power Gain
    35.8 to 40.8 dB
  • Output Power
    27.7 to 27.9 dBm
  • Output Power
    0.59 to 0.62 W
  • Grade
    Commercial
  • Saturated Power
    27.7 to 27.9 dBm
  • Saturated Power
    0.58 to 0.61 W
  • Input Power
    10 dBm
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Supply Voltage
    4.75 to 5.25 V
  • Current Consumption
    68 to 120 mA
  • Quiscent Current
    68 mA
  • Package Type
    Surface Mount
  • Package
    16-Terminal HVQFN Package
  • Dimensions
    3 mm × 3 mm × 0.85 mm
  • Operating Temperature
    -40 to 115 Degree C
  • Storage Temperature
    -40 to 150 Degree C

Technical Documents