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  5. MMA25312BT1

The MMA25312BT1 from NXP Semiconductors is a RF Amplifier with Frequency 2.3 to 2.7 GHz, Power Gain 26 dB, Small Signal Gain 24.5 to 26 dB, Noise Figure 3.8 dB, Output Power 31 dBm. Tags: Surface Mount, Driver Amplifier, Power Amplifier. More details for MMA25312BT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMA25312BT1
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT Linear Amplifier, 2300 -2700 MHz, 26 dB, 31 dBm

General Parameters

  • Type
    Driver Amplifier, Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    WiMAX, ISM Band, WLAN
  • Frequency
    2.3 to 2.7 GHz
  • Power Gain
    26 dB
  • Small Signal Gain
    24.5 to 26 dB
  • Noise Figure
    3.8 dB
  • Output Power
    31 dBm
  • Output Power
    1.26 W
  • P1dB
    31 dBm
  • P1dB
    1.25 W
  • Input Power
    30 dBm
  • Input Power
    1 W
  • Input Return Loss
    -14 to -12 dB
  • Output Return Loss
    -15 to -11 dB
  • Supply Voltage
    3.0 to 5.0 V
  • Current Consumption
    Supply current: 110 to 138 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    QFN 3 x 3
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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