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  5. MMG3H21NT1

The MMG3H21NT1 from NXP Semiconductors is a RF Amplifier with Frequency 1 MHz to 6 GHz, Power Gain 19.3 dB, Small Signal Gain 19.3 dB, Noise Figure 5.5 dB, Output Power 20.5 dBm. Tags: Surface Mount, Power Amplifier. More details for MMG3H21NT1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMG3H21NT1
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT GPA, 0 6000 MHz, 19.3 dB, 20.5 dBm

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    PCS, WLL, CATV, VHF Band, UHF Band, UMTS
  • Industry Application
    Cellular, Commercial
  • Frequency
    1 MHz to 6 GHz
  • Power Gain
    19.3 dB
  • Small Signal Gain
    19.3 dB
  • Noise Figure
    5.5 dB
  • Output Power
    20.5 dBm
  • Output Power
    0.11 W
  • P1dB
    20.5 dBm
  • P1dB
    0.11 W
  • IP3
    37 dBm
  • IP3
    5.01 W
  • Input Power
    12 dBm
  • Input Power
    0.02 W
  • Class
    Class A
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    -25 to -18 dB
  • Output Return Loss
    -10 to -8 dB
  • Supply Voltage
    5 V
  • Current Consumption
    Supply current: 90 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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