The MML09211H from NXP Semiconductors is a RF Amplifier with Frequency 400 MHz to 1.4 GHz, Gain 21.3 dB, Small Signal Gain 18.8 to 26.1 dB pk-pk, Noise Figure 0.52 to 0.66 dB, Output Power 20 to 22 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for MML09211H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MML09211H
  • Manufacturer
    NXP Semiconductors
  • Description
    Enhancement Mode Phemt Technology (E--pHEMT) Low Noise Amplifier

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    ISM Band, GSM, 4G/LTE, WCDMA
  • Industry Application
    Cellular, Industrial, Aerospace & Defense, Medical
  • Frequency
    400 MHz to 1.4 GHz
  • Gain
    21.3 dB
  • Small Signal Gain
    18.8 to 26.1 dB pk-pk
  • Noise Figure
    0.52 to 0.66 dB
  • Output Power
    20 to 22 dBm
  • Output Power
    0.1 to 0.16 W
  • P1dB
    20 to 22 dBm
  • P1dB
    0.1 to 0.158 W
  • IP3
    32.6 dBm
  • IP3
    1.81 W
  • Output Power CW
    22 dBm
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • Pulsed/CW
    CW
  • Reverse Isolation
    -35 dB
  • Sub-Category
    Linear Amplifier
  • Return Loss
    -23 to -17 dB
  • Output Return Loss
    -20 to -16 dB
  • Supply Voltage
    5 V
  • Current Consumption
    45 to 90 mA
  • Transistor Technology
    E-pHEMT
  • Technology
    GaAs, SiGe
  • Package Type
    Surface Mount
  • Package
    DFN 2 x 2
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    yes

Technical Documents