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  5. MML20211H

The MML20211H from NXP Semiconductors is a RF Amplifier with Frequency 1.4 to 2.8 GHz, Gain 18.6 dB, Small Signal Gain 18.1 to 21.3 dB pk-pk, Noise Figure 0.65 to 0.85 dB, Output Power 19.6 to 21.3 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for MML20211H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MML20211H
  • Manufacturer
    NXP Semiconductors
  • Description
    Enhancement Mode Phemt Technology (E--pHEMT) Low Noise Amplifier

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    PCS, 4G/LTE, WCDMA, TD-SCDMA
  • Industry Application
    Cellular
  • Frequency
    1.4 to 2.8 GHz
  • Gain
    18.6 dB
  • Small Signal Gain
    18.1 to 21.3 dB pk-pk
  • Noise Figure
    0.65 to 0.85 dB
  • Output Power
    19.6 to 21.3 dBm
  • Output Power
    0.09 to 0.13 W
  • P1dB
    19.6 to 21.3 dBm
  • P1dB
    0.091 to 0.135 W
  • IP3
    10.8 to 33 dBm
  • IP3
    0.012 to 1.99 W
  • Output Power CW
    21.3 dBm
  • Input Power
    22 dBm
  • Input Power
    0.158 W
  • Pulsed/CW
    CW
  • Reverse Isolation
    -35 dB
  • Sub-Category
    Linear Amplifier
  • Return Loss
    -19.5 to -16 dB
  • Output Return Loss
    -28 to -20 dB
  • Supply Voltage
    5 V
  • Current Consumption
    45 to 85 mA
  • Transistor Technology
    E-pHEMT
  • Technology
    GaAs, SiGe
  • Package Type
    Surface Mount
  • Package
    DFN 2 x 2
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    yes

Technical Documents
View details on the manufacturer's website
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