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  5. MML25231H

The MML25231H from NXP Semiconductors is a RF Amplifier with Frequency 1 to 4 GHz, Gain 15.2 dB, Small Signal Gain 11.7 to 17.8 dB pk-pk, Noise Figure 0.38 to 0.98 dB, Output Power 22.6 to 22.9 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for MML25231H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MML25231H
  • Manufacturer
    NXP Semiconductors
  • Description
    Enhancement Mode Phemt Technology (E--pHEMT) Low Noise Amplifier

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    CDMA, 4G/LTE, WCDMA
  • Industry Application
    Cellular
  • Frequency
    1 to 4 GHz
  • Gain
    15.2 dB
  • Small Signal Gain
    11.7 to 17.8 dB pk-pk
  • Noise Figure
    0.38 to 0.98 dB
  • Output Power
    22.6 to 22.9 dBm
  • Output Power
    0.18 to 0.19 W
  • P1dB
    22.6 to 22.9 dBm
  • P1dB
    0.182 to 0.195 W
  • IP3
    16.5 to 37 dBm
  • IP3
    0.04 to 5.01 W
  • Output Power CW
    22.5 dBm
  • Input Power
    28 dBm
  • Input Power
    0.631 W
  • Pulsed/CW
    CW
  • Reverse Isolation
    -20.9 dB
  • Sub-Category
    Linear Amplifier
  • Return Loss
    20 dBm
  • Output Return Loss
    -15 dB
  • Supply Voltage
    5 V
  • Current Consumption
    55 to 65 mA
  • Transistor Technology
    E-pHEMT
  • Technology
    GaAs, SiGe
  • Package Type
    Surface Mount
  • Package
    DFN 2 x 2
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    yes

Technical Documents
View details on the manufacturer's website
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