The MMZ25333BT1 from NXP Semiconductors is a RF Amplifier with Frequency 1500 to 2700 MHz, Small Signal Gain 40.4 to 43 dB, P1dB 32 to 33 dBm, P1dB 1.58 to 1.99 W, IP3 42.8 dBm. Tags: Surface Mount, Driver Amplifier. More details for MMZ25333BT1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MMZ25333BT1
  • Manufacturer
    NXP Semiconductors
  • Description
    33 dBm, Driver Amplifiers from 1500 to 2700 MHz

General Parameters

  • Type
    Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, Mobile, Communication, Small Cell
  • Standards Supported
    WCDMA
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    1500 to 2700 MHz
  • Small Signal Gain
    40.4 to 43 dB
  • P1dB
    32 to 33 dBm
  • P1dB
    1.58 to 1.99 W
  • IP3
    42.8 dBm
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    -12.2 dB
  • Output Return Loss
    -7.1 dB
  • Supply Voltage
    5 V
  • Current Consumption
    244 to 284 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Surface Mount
  • Package
    QFN Package
  • Dimensions
    4 x 4 x 0.85 mm
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Junction Temperature: 175 Degree C

Technical Documents