QPA9908

RF Amplifier by Qorvo (889 more products)

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QPA9908 Image

The QPA9908 from Qorvo is a high efficiency Power Amplifier that operates from 925 to 960 MHz. It delivers a P3dB of 4 W (35.5 dBm) while maintaining 36% PAE at 28 dBm average operation power. It has a typical gain of 33 dB. This high-efficiency power amplifier is fabricated using InGaP/GaAs HBT technology and is designed for small-cell wireless infrastructure systems. It provides an excellent digital pre-distortion (DPD) linearized ACPR of -48 dBc for signal bandwidths up to 40 MHz. The amplifier requires a DC supply from 4.75 to 5.25 V and consumes 350 mA of current.

The QPA9908 is available in a 16-pad SMT package that measures 5 x 5 mm with on chip ESD protection and is ideal for 3GPP Band 8 small cells, M-MIMO, repeaters / DAS, mobile infrastructure, and general-purpose wireless applications. It is targeted for use as a power amplifier with DPD linearization technique in wireless infrastructure where high linearity, medium power, and high efficiency are required. The amplifier is ideal for transceiver line cards in current and next generation multi-carrier 3G/4G/5G base stations.

Product Specifications

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Product Details

  • Part Number
    QPA9908
  • Manufacturer
    Qorvo
  • Description
    4 W High-Efficiency Power Amplifier from 925 to 960 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Boosters/Repeaters, Small Cell
  • Display Application
    M-MIMO, DAS, General Purpose Wireless
  • Industry Application
    Wireless Infrastructure
  • Frequency
    925 to 960 MHz
  • Gain
    33 dB
  • Grade
    Commercial
  • Input Power
    10 dBm
  • Input Power
    10 mW
  • PAE
    36%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    100 us to 1 ms
  • Duty Cycle
    10%
  • Sub-Category
    Linear Amplifier
  • Return Loss
    -20 to -4.9 dB
  • Input Return Loss
    -20 dB
  • Output Return Loss
    -4.9 dB
  • Harmonics
    -50 to -40 dBc (3rd Harominc to 2nd Harmonic)
  • Supply Voltage
    4.75 to 5.25 V
  • Current Consumption
    350 mA
  • Quiscent Current
    70 mA
  • Transistor Technology
    InGaP/GaAs, HBT
  • Package Type
    Surface Mount
  • Package
    16 Pad
  • Dimensions
    5 x 5 mm
  • Storage Temperature
    -55 to 125 Degree C
  • RoHS
    Yes
  • Note
    P3 dB : 36.6 dBm, Thermal Resistance : 24 °C/W

Technical Documents