The QPD2025D from Qorvo is a discrete GaAs Transistor that operates from DC to 20 GHz. This transistor delivers a saturated output power of 24 dBm with a gain of 14 dB and has a power-added efficiency (PAE) of 58%. It is designed using a 0.25 µm power pHEMT production process and has a protective overcoat layer with silicon nitride that provides a level of environmental robustness and scratch protection. The transistor requires a DC supply of 8 V and consumes 40 mA of current. It is available as a die that measures 0.41 x 0.34 x 0.10 mm. This transistor uses a design process that features advanced techniques to optimize microwave power and efficiency and is ideal for communications, radar, point-to-point radio, and satellite communications.
