QPM1021

RF Amplifier by Qorvo (888 more products)

Note : Your request will be directed to Qorvo.

QPM1021 Image

The QPM1021 from Qorvo is a High Power GaN Amplifier that operates from 10 to 12 GHz. It delivers 100 W of saturated output power with a gain of over 20 dB, and PAE of more than 32%. This amplifier is fabricated using Qorvo’s 0.15 um GaN on SiC process and is available in a 10-lead 19.05 x 19.05 x 4.52 mm bolt-down package, with a pure copper base for superior thermal management. It is an ideal solution for both commercial & military radar systems, satellite communication systems, and data links.

Product Specifications

View similar products

Product Details

  • Part Number
    QPM1021
  • Manufacturer
    Qorvo
  • Description
    100 W GaN Power Amplifier from 10 to 12 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Commercial, Radar, Military
  • Frequency
    10 to 12 GHz
  • Power Gain
    20 dB
  • Small Signal Gain
    26 dB
  • Output Power
    50 dBm
  • Output Power
    100 W
  • Saturated Power
    50 dBm
  • Saturated Power
    100 W
  • Input Power
    28 dBm
  • Input Power
    0.63 W
  • PAE
    26.2 to 32.9%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    13 dB
  • Output Return Loss
    11 dB
  • Supply Voltage
    24 to 28 V
  • Transistor Technology
    GaN on SiC
  • Package
    10-Lead Bolt-Down
  • Dimensions
    19.05 x 19.05 x 4.52 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents