RAMP25G50G01EBV

RF Amplifier by RF-Lambda (707 more products)

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RAMP25G50G01EBV Image

The RAMP25G50G01EBV from RF-Lambda is a RF Amplifier with Frequency 20 to 50 GHz, Gain 45 to 58 dB, Small Signal Gain 55 dB, Gain Flatness ±1.5 to 2 dB, Noise Figure 2.5 dB. Tags: Benchtop / Rackmount, Low Noise Amplifier, Power Amplifier. More details for RAMP25G50G01EBV can be seen below.

Product Specifications

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Product Details

  • Part Number
    RAMP25G50G01EBV
  • Manufacturer
    RF-Lambda
  • Description
    Benchtop RF System AC Amplifier from 20 to 50 GHz

General Parameters

  • Type
    Low Noise Amplifier, Power Amplifier
  • Configuration
    System
  • Application
    Wireless Communication, Radio, Research and Development, Base Station, Instrumentation
  • Standards Supported
    5G
  • Industry Application
    Wireless Infrastructure, Aerospace & Defense, Military, Test & Measurement, Radar, Broadcast, Cellular
  • Frequency
    20 to 50 GHz
  • Gain
    45 to 58 dB
  • Small Signal Gain
    55 dB
  • Gain Flatness
    ±1.5 to 2 dB
  • Noise Figure
    2.5 dB
  • P1dB
    15 to 17 dBm
  • P1dB
    0.031 to 0.050 W
  • Grade
    Commercial, Military, Space
  • IP3
    25 to 26 dBm
  • IP3
    0.31 to 0.39 W
  • Saturated Power
    17 to 18 dBm
  • Saturated Power
    0.050 to 0.063 W
  • Input Power
    20 dBm
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Input VSWR
    2.00:1, 2.50:1
  • Output VSWR
    2.00:1
  • Sub-Category
    GaN Amplifier
  • AC Voltage
    110 to 240 V
  • Current Consumption
    60 mA
  • Package Type
    Benchtop / Rackmount
  • Input Connector
    2.4 mm - Female
  • Output Connector
    2.4 mm - Female
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -50 to 105 Degree C
  • Note
    Gain Variation Over Temperature : ±3 dB

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