RRP9397400-56A

RF Amplifier by RFHIC | Visit website (151 more products)

Note : Your request will be directed to RFHIC.

RRP9397400-56A Image

The RRP9397400-56A from RFHIC is a Solid-State Power Amplifier that operates in the X-band from 9300 to 9700 MHz. It delivers an output power of 400 W with a gain of 54 dB and has a Power Added Efficiency (PAE) of 25%. This power amplifier is fabricated using GaN High Electron Mobility (HEMT) technology that offers a high breakdown voltage, wider bandwidth and high efficiency. It has a pulse width of 100 µs, rise/fall time of less than 50 ns and a duty cycle of 10%. The SSPA requires a DC supply voltage of 50 V and consumes less than 250 W of power. It is available in a through-hole module that measures 220 x 120 x 23 mm and has SMA / N-type (female) connectors. This amplifier is ideal for use in naval, surveillance, air traffic control, threat detection, space exploration, missile tracking, meteorological and weather radar system applications.

Product Specifications

View similar products

Product Details

  • Part Number
    RRP9397400-56A
  • Manufacturer
    RFHIC
  • Description
    400 W GaN Solid-State Power Amplifier from 9.3 to 9.7 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Air Traffic Control, Weather Radar System
  • Industry Application
    Radar, Aerospace & Defense
  • Frequency
    9.3 to 9.7 GHz
  • Gain
    54 dB
  • Power Gain
    54 dB
  • Gain Flatness
    ±1 dB
  • Grade
    Commercial, Military
  • Input Power
    2 to 4 dBm
  • Input Power
    0.00158 to 0.0025 W
  • PAE
    25 %
  • Power Consumption
    200 to 250 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    100 us
  • Duty Cycle
    10 %
  • Rise Time
    50 ns
  • Fall Time
    50 ns
  • VSWR
    48:01:00
  • Sub-Category
    GaN Amplifier, SSPA
  • Harmonics
    40 dBc
  • Spurious
    60 dBc
  • Pulse Droop
    0.5 to 1 dB
  • Switching Time
    200 ns
  • Supply Voltage
    50 V
  • Current Consumption
    4 to 5 mA
  • Transistor Technology
    GaN
  • Technology
    GaN HEMT
  • Dimensions
    220 x 120 x 23 mm
  • Input Connector
    SMA, SMA - Female
  • Output Connector
    N Type, N Type - Female
  • DC Connectors
    7W2 Combo Connector
  • Weight
    1.4 kg
  • Operating Temperature
    -30 to 75 Degree C
  • Storage Temperature
    -50 to 125 Degree C
  • RoHS
    Yes
  • Note
    Off State Isolation: 100 dBc; Phase Deviation:± 20 Degrees

Technical Documents