RTH26008S-30

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The RTH26008S-30 from RFHIC is a Hybrid Power Amplifier that operates from 2620 to 2690 MHz. It delivers an output power of 8 W with a gain of 29 dB and has a PAE of 45%. This amplifier is fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process and is integrated with asymmetric Doherty configurations for higher power-added efficiency. It is available in a surface-mount package that measures 32.0 x 20.0 x 5.6 mm and requires a DC supply of 31 V. The package is made of an AIN (aluminum nitride) board which provides excellent thermal dissipation and has integrated DC blocking caps on both RF ports to simplify system integration. It is suitable for use in RF sub-systems, base stations, RRH, 4G/ LTE systems, and small cell applications.

Product Specifications

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Product Details

  • Part Number
    RTH26008S-30
  • Manufacturer
    RFHIC
  • Description
    8 W GaN-on SiC Power Amplifier from 2620 to 2690 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, Small Cell
  • Standards Supported
    4G/LTE
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    2.62 to 2.69 GHz
  • Power Gain
    27 to 29 dB
  • Gain Flatness
    +/- 2 dB
  • Grade
    Commercial
  • Saturated Power
    46.5 dBm
  • Saturated Power
    44.66 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Sub-Category
    Doherty Amplifier, GaN Amplifier, Hybrid Amplifier
  • Input Return Loss
    8 to 10 dB
  • Supply Voltage
    -4.5 to 31 V
  • Transistor Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Dimensions
    32 x 20 x 5.6 mm
  • Weight
    7 g
  • Operating Temperature
    -30 to 100 Degree
  • Storage Temperature
    -40 to 100 Degree C
  • RoHS
    Yes

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