RWP03160-2R

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The RWP03160-2R from RFHIC is a GaN-on-SiC Power Amplifier that operates from 20 to 800 MHz. It delivers a saturated output power of 160 W with a small signal gain of 44 dB and an efficiency of 53.13%. This amplifier is fabricated using GaN-on-SiC technology that is attached to an Aluminum sub-carrier. It is fully matched for broadband performance and offers good thermal handling capabilities based on a patented technology. This power amplifier requires a DC supply of 36 V and consumes 13 A of current. It is available in a module that measures 120 x 65 x 16.7 mm with SMA (female) connectors and is ideal for medical, telecommunications, and broadcasting applications.

Product Specifications

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Product Details

  • Part Number
    RWP03160-2R
  • Manufacturer
    RFHIC
  • Description
    160 W GaN-on-SiC Power Amplifier from 20 to 800 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    General Purpose
  • Industry Application
    Military
  • Frequency
    20 to 800 MHz
  • Small Signal Gain
    42 to 48 dB
  • Gain Flatness
    ±1.5 dB
  • IP3
    57 dBm
  • Saturated Power
    52 dBm
  • Saturated Power
    100 to 158.48 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier, SSPA
  • Input Return Loss
    -5 dB
  • Harmonics
    15 dBc
  • Supply Voltage
    36 V
  • Current Consumption
    13 A
  • Quiscent Current
    7.5 A
  • Technology
    GaN-on-SiC
  • Dimensions
    120(L) x 65(W) x 16.7(H)
  • Connectors
    SMA Female
  • DC Connectors
    SMW420-06P
  • Weight
    240 g
  • Cooling Options
    External Heat-sink
  • Operating Temperature
    -10 to 80 Degree C
  • Storage Temperature
    -40 to 105 Degree C

Technical Documents