The RWP05040-10 from RFHIC Corporation is a GaN-on-SiC Power Amplifier that operates from 20 to 1000 MHz. It delivers a saturated output power of 40 W with a small signal gain of more than 36 dB. This amplifier is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation.
It has fully-matched input and output ports for broadband performance and supports improved thermal handling based on a patented technology. This power amplifier requires a DC supply 28 V and consumes 3.5 A of current. It is available as a pallet that measures 90 x 75 x 25 mm and has SMA (female) connectors. It is ideal for communication systems, laser drive amplifier, radio power amplifier, wideband jammer and general purpose applications.
