RWP1020100-53

RF Amplifier by RFHIC | Visit website (147 more products)

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The RWP1020100-53 from RFHIC is a Power Amplifier that operates from 1 to 2 GHz. It delivers an output power of 100 W (50 dBm) with a power gain of 53.8 dB. This power amplifier is based on GaN-on-SiC technology and provides improved thermal handling using a patented technology. It requires a DC supply of 36 V and consumes less than 2 A of current. The amplifier is available in a module that measures 134 x 105 x 30 mm with SMA-female and N-type (female) connectors. It is ideal for use in aerospace and defense, military, electronic warfare, radar, SATCOM, EMI/RFI and jamming applications.

Product Specifications

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Product Details

  • Part Number
    RWP1020100-53
  • Manufacturer
    RFHIC
  • Description
    100 W GaN Power Amplifier from 1 to 2 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Electronic Warfare, EMI/RFI, Jamming, Radar
  • Industry Application
    Aerospace & Defense, Military, SATCOM
  • Frequency
    1000 to 2000 MHz
  • Power Gain
    53 dB
  • Gain Flatness
    ±1.0dB
  • Output Power
    100 W
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier, SSPA
  • Input Return Loss
    -5 dB
  • Supply Voltage
    36 V
  • Current Consumption
    9 A
  • Quiscent Current
    1.5 A
  • Technology
    GaN-on-SiC
  • Dimensions
    134 (L) x 105 (W) x 30 (H) mm
  • Input Connector
    SMA - Female
  • Output Connector
    N Type - Female
  • Weight
    635 g
  • Cooling Options
    External Heat-sink
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 105 Degree C

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