The RWP25020-50 from RFHIC is a GaN-on-SiC Power Amplifier that operates from 2000 to 3000 MHz. It provides an output power of 43 dBm (~20 W) and has a power gain of 22 dB. This amplifier is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. It has fully-matched input and output ports for broadband performance and supports improved thermal handling based on a patented technology.
The RWP25020-50 requires a supply voltage of 28 V and consumes a current of less than 3.5 A. It is available as a module that measures 70 x 50.8 x 17.1 mm and has SMA (female) connectors. It is ideal for use in communication systems, laser drive amplifiers, radio power amplifiers, and wideband jammers.
