The RWS02520-1K from RFHIC is a GaN-on-SiC Power Amplifier that operates from 100 to 600 MHz. It delivers an output power of 20 W (P1dB) with a small signal gain of 46 dB. This amplifier uses RFHIC’s patented thermal handling technology and Gallium Nitride on SiC technology attached to an aluminum subcarrier. It has a group delay of 0.7 ns and an ON/OFF switching time of 3 μs. This amplifier requires a DC supply of 28 V and consumes 2.3 A of current. It is available in a module that measures 63.0 x 38.0 x 14.4 mm and is ideal for broadcasting, telecommunication, medical, etc. applications including high-frequency communication systems, laser drive amplifiers, wideband jammers, and satellite communications.