RWS02520-1K

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The RWS02520-1K from RFHIC is a GaN-on-SiC Power Amplifier that operates from 100 to 600 MHz. It delivers an output power of 20 W (P1dB) with a small signal gain of 46 dB. This amplifier uses RFHIC’s patented thermal handling technology and Gallium Nitride on SiC technology attached to an aluminum subcarrier. It has a group delay of 0.7 ns and an ON/OFF switching time of 3 μs. This amplifier requires a DC supply of 28 V and consumes 2.3 A of current. It is available in a module that measures 63.0 x 38.0 x 14.4 mm and is ideal for broadcasting, telecommunication, medical, etc. applications including high-frequency communication systems, laser drive amplifiers, wideband jammers, and satellite communications.

Product Specifications

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Product Details

  • Part Number
    RWS02520-1K
  • Manufacturer
    RFHIC
  • Description
    20 W GaN-on-SiC Power Amplifier from 100 to 600 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Communication, Jamming
  • Display Application
    Wideband Jammers, Laser Drive Amplifiers
  • Industry Application
    SATCOM
  • Frequency
    100 to 600 MHz
  • Gain
    44 to 48 dB
  • Power Gain
    46 dB
  • Small Signal Gain
    44 to 48 dB
  • Output Power
    20 W
  • Output Power
    43 dBm
  • P1dB
    12.5 to 19.9 W
  • P1dB
    41 to 43 dBm
  • Gain Stability
    +/- 2 dB
  • Input Power
    10 dBm (Max)
  • Input Power
    0.01 W
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -14 to -10 dB
  • Harmonics
    -50 to -30 dBc
  • Switching Time
    3 to 5 ns
  • Supply Voltage
    27 V
  • Current Consumption
    2.3 to 2.5 A
  • Quiscent Current
    2.4 to 2.5 A
  • Transistor Technology
    GaN on SiC
  • Dimensions
    2.48 x 1.5 x 0.57 in.
  • Operating Temperature
    -20 to 60 Degree C
  • Storage Temperature
    -40 to 105 Degree C

Technical Documents