SDM26005-30H

RF Amplifier by RFHIC | Visit website (151 more products)

Note : Your request will be directed to RFHIC.

SDM26005-30H Image

The SDM26005-30H from RFHIC is a GaN Hybrid Power Amplifier that operates from 2496 to 2690 MHz. This amplifier delivers a saturated output power of 70.8 W with a gain of 38.3 dB and a drain efficiency of 17.3%. It is manufactured using GaN-on-SiC technology and has a linearity of less than -37 dBc. This 2-stage power amplifier is internally matched to 50 ohms and integrates micro-strip lines. It requires a DC supply of 48 V and consumes less than 41.2 W of power. The amplifier is available in a ceramic surface-mount package that measures 8.0 x 14.0 x 2.6 mm and is ideal for massive MIMO, multi-band, multi-mode, and multi-carrier systems, RRH drive amplifiers, and 4G/5G applications.

Product Specifications

View similar products

Product Details

  • Part Number
    SDM26005-30H
  • Manufacturer
    RFHIC
  • Description
    70 W GaN Power Amplifier from 2496 to 2690 MHz for 5G Massive MIMO Systems

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell, Mobile Infrastructure
  • Display Application
    Massive MIMO, RRH Drive Amplifier
  • Standards Supported
    4G, 5G, TDD, FDD
  • Industry Application
    Wireless Infrastructure, Cellular
  • Frequency
    2.496 to 2.69 GHz
  • Gain
    38 to 38.3 dB
  • Power Gain
    37 to 42 dB
  • Saturated Power
    47.48 to 50 dBm
  • Saturated Power
    56 to 100 W
  • Peak Power
    100 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    10 uSec
  • Modulation
    PAM
  • Sub-Category
    Hybrid Amplifier, GaN Amplifier
  • Supply Voltage
    48 Vdc
  • Technology
    GaN on SiC
  • Package Type
    Surface Mount, Ceramic
  • Package
    PP-3G
  • Dimensions
    8 x 14 x 2.6 mm
  • Operating Temperature
    -30 to 125 Degree C
  • Storage Temperature
    -40 to 125 Degree C
  • RoHS
    Yes

Technical Documents