PG753

RF Amplifier by SJM Prewell

Note : Your request will be directed to SJM Prewell.

PG753 Image

The PG753 from SJM Prewell is a GaAs p-HEMT Amplifier that operates from 30 to 6000 MHz. It delivers a P1dB of 19.7 dBm (at 3500 MHz) with a gain of more than 19.1 dB and has a noise figure of less than 2 dB. The amplifier operates on a single voltage supply of 3.3/5 Vand can handle up to 20 dBm of input power. It is internally matched to 50-ohms for high linearity and reliability which makes it ideal for wideband communication systems and has an internal temperature compensation active bias. The unit is available as a surface mount 8-pin DFN package that measures 2.10 x 2.10 x 0.81 mm and is suitable for IoT, broadcasting, WLAN, base stations, repeaters, automotive and military applications.

Product Specifications

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Product Details

  • Part Number
    PG753
  • Manufacturer
    SJM Prewell
  • Description
    GaAs p-HEMT Amplifier from 30 to 6000 MHz

General Parameters

  • Type
    Gain Block
  • Configuration
    IC/MMIC/SMT
  • Application
    Automotive
  • Standards Supported
    FDD-LTE, TD-LTE, TDS-CDMA, CDMA, WCDMA, WiMAX, PCS, GSM, GPS, GPRS, TETRA, ISM Band
  • Industry Application
    Broadcast, IoT, Military, GPS/GNSS
  • Frequency
    30 MHz to 6 GHz
  • Gain
    21.5 dB
  • Noise Figure
    0.6 to 2.0 dB
  • Output Power
    15.4 to 20.2 dBm
  • Output Power
    0.03 to 0.1 W
  • P1dB
    15.4 to 20.2 dBm
  • P1dB
    0.03 to 0.10 W
  • Grade
    Military
  • IP3
    28.1 to 36.8 dBm
  • IP3
    0.64 to 4.78 W
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • Impedance
    50 Ohms
  • Supply Voltage
    3.3 to 5 V
  • Current Consumption
    90 mA
  • Transistor Technology
    GaAs
  • Technology
    p-HEMT
  • Package Type
    Surface Mount
  • Package
    DFN 8L
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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