CHA6682-98F

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CHA6682-98F Image

The CHA6682-98F from United Monolithic Semiconductors is a 3-Stage GaN Power Amplifier MMIC that operates from 24 to 27.5 GHz. It delivers a saturated output power of 5 W (37 dBm) with a gain of 25 dB and a power-added efficiency of 32%. This amplifier has a return loss of -7 dB (input) and -10 dB (output). It is manufactured on a robust GaN on SiC HEMT process and has an output power detector & integrated ESD RF protection circuitry. 

The CHA6682-98F requires a DC supply of 20 V and consumes 1000 mA of current. It is available as a bare die that measures 2.5 x 1.6 mm. This amplifier is ideal for microwave systems and telecommunication applications.

Product Specifications

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Product Details

  • Part Number
    CHA6682-98F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    3-Stage GaN Power Amplifier MMIC from 24 to 27.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Telecommunication
  • Frequency
    24 to 27.5 GHz
  • Gain
    25 dB
  • Saturated Power
    5 W
  • PAE
    32 %
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Return Loss
    -10 to -7 dB
  • Input Return Loss
    -7 dB
  • Output Return Loss
    -10 dB
  • Supply Voltage
    20 V
  • Quiscent Current
    115 mA
  • Transistor Technology
    GaN on SiC HEMT
  • Dimensions
    2.5 x 1.6 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Tags
    GaN Series
  • Note
    Maximum Input Power: 18 dBm

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