The CHA6710-99F from UMS is a 5.5 watt GaN Power Amplifier that operates in the X-Band from 8 to 12.75 GHz. The amplifier provides 5.5 watts of power with 23 dB of linear gain and a power added efficiency of 36%. It requires a 25 V supply and has been designed for a wide range of applications including defense and commercial communication systems. The amplifier is supplied as a bare die. It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.
