The CHA6710-FAB from United Monolithic Semiconductors is an X-Band Two-Stage Power Amplifier that operates from 8 to 12.75 GHz. It provides 5 W of saturated output power with a gain of 22.5 dB and has a Power Added Efficiency of 35%. The amplifier can handle up to 30 dBm of peak input power.
The circuit is manufactured with a GaN pHEMT process, 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in an RoHS compliant surface mount hermetic metal ceramic package that measures 6 x 6 mm and is suitable for applications such as Defense and Space Communication Systems.
