CHA7250-QAB

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CHA7250-QAB Image

The CHA7250-QAB from United Monolithic Semiconductors (UMS) is a Two-Stage MMIC Power Amplifier that operates from 10 to 12.75 GHz. It delivers a saturated output power of 10 W (~40 dBm) with a gain of 20 dB, and has a Power Added Efficiency (PAE) of 37%. This amplifier IC is manufactured on UMS’ proprietary 150 nm GaN-on-SiC (AlGaN/GaN-on-SiC) technology and exhibits high linearity and efficiency. It requires a DC supply of 20 V, consumes 130 mA of current and 12 W of power. This RoHS-compliant PA is available in a surface-mount package that measures 6 x 6 mm and is ideal for point-to-point radio applications.

Product Specifications

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Product Details

  • Part Number
    CHA7250-QAB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    10 W GaN Power Amplifier MMIC from 10 to 12.75 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Point-to-Point
  • Industry Application
    Wireless Infrastructure
  • Frequency
    10 to 12.75 GHz
  • Gain
    20 dB
  • Grade
    Commercial
  • Saturated Power
    40 dBm
  • Saturated Power
    10 W
  • Input Power
    28 to 30 dBm
  • Input Power
    0.63 to 1 W
  • PAE
    37 %
  • Power Consumption
    12 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Input Return Loss
    11 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    18 to 25 V
  • Current Consumption
    130 mA
  • Quiscent Current
    480 mA
  • Transistor Technology
    150nm GaN on SiC
  • Technology
    GaN MMIC
  • Package Type
    Surface Mount
  • Package
    38 leads QFN Package
  • Dimensions
    6 x 6 mm
  • Operating Temperature
    -30 to 95 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Thermal Resistance: 6.7 °C/W

Technical Documents