CHA7618-99F

Note : Your request will be directed to United Monolithic Semiconductors.

CHA7618-99F Image

The CHA7618-99F from United Monolithic Semiconductors is a Power Amplifier that operates from 5.5 to 18 GHz. It delivers an output power of 10 W with a linear gain of 30 dB and has a Power Added Efficiency of 20 %. The amplifier is based on UMS' proprietary 0.15 µm GaN HEMT technology. It requires a DC supply of 18 V and consumes 0.53 A of current. This amplifier is available in a surface-mount package that measures 5.80 x 3.48 x 0.07 mm and is suitable for use in EW, signal jammers, test & instrumentation, and microwave systems (radar & communication) applications.

Product Specifications

View similar products

Product Details

  • Part Number
    CHA7618-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    10 W GaN Power Amplifier from 5.5 to 18 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Aerospace & Defense, Jamming, Test & Measurement, Radar
  • Frequency
    5.5 to 18 GHz
  • Gain
    30 dB
  • Grade
    Commercial
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • Input Return Loss
    10 dB
  • Output Return Loss
    7 dB
  • Supply Voltage
    18 V
  • Current Consumption
    0.53 A
  • Technology
    GaN HEMT
  • Dimensions
    5.8mmx3.48mmx0.07mm

Technical Documents