The CHA8054-99F from United Monolithic Semiconductors is a 2-Stage X-Band Power Amplifier that operates from 7.7 to 8.6 GHz. It provides up to 23 W of output power with a linear gain of 27 dB and power-added efficiency (PAE) of 50%. The circuit is fabricated using a GaN HEMT process with 0.25μm gate length, via holes through the substrate, air bridges, and electron beam gate lithography. It is available as a chip (also available as bare die) that measures 5.14 x 4.22 x 0.1 mm and is suitable for a wide range of applications, from space, military to commercial communication systems.
