CHA8100-99F

Note : Your request will be directed to United Monolithic Semiconductors.

The CHA8100-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 9 to 10.5 GHz, Gain 17 to 18.5 dB, Output Power 41 dBm, Output Power 12.59 W, IP3 39.5 to 40.5 dBm. Tags: Power Amplifier. More details for CHA8100-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHA8100-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    X-band HBT High Power Amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Standards Supported
    X Band
  • Frequency
    9 to 10.5 GHz
  • Gain
    17 to 18.5 dB
  • Output Power
    41 dBm
  • Output Power
    12.59 W
  • IP3
    39.5 to 40.5 dBm
  • IP3
    8.91 to 11.22 W
  • Saturated Power
    41 dBm
  • Saturated Power
    12.59 W
  • Pulsed/CW
    CW
  • Return Loss
    -9 dB
  • Output Return Loss
    -15 dB
  • Supply Voltage
    8 to 9 V
  • Quiscent Current
    2100 mA
  • Technology
    GaAs
  • RoHS
    Yes

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