CHZ8012-QJA

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The CHZ8012-QJA from UMS is an S-Band Quasi-MMIC GaN Power Amplifier that operates from 2.6 to 3.4 GHz. The amplifier provides 12 watts of power with 16.5 dB of signal gain and a power added efficiency of 55%. It requires a 30 V supply and has been designed for a wide range of applications, from military to commercial radar systems. The amplifier is based on GaN technology and has GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies.

Product Specifications

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Product Details

  • Part Number
    CHZ8012-QJA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    12 W GaN High Power Amplifier from 2.6 to 3.4 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    S Band
  • Frequency
    2600 to 3400 MHz
  • Gain
    16.5 dB
  • Output Power
    40.79 dBm
  • Output Power
    11.99 W
  • Saturated Power
    40.79 dBm
  • Saturated Power
    12 W
  • PAE
    55%
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    11.4 dB
  • Output Return Loss
    8.5 dB
  • Supply Voltage
    30 V
  • Package Type
    Surface Mount

Technical Documents