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H8G2022M10P

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The H8G2022M10P from Watech Electronics is a RF Amplifier with Frequency 2.11 to 2.2 GHz, Gain 26.9 to 27.8 dB, Output Power 30.97 to 40 dBm, Output Power 1.25 to 10 W, Saturated Power 40 dBm. Tags: Surface Mount, Driver Amplifier. More details for H8G2022M10P can be seen below.

Product Specifications

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Product Details

  • Part Number
    H8G2022M10P
  • Manufacturer
    Watech Electronics
  • Description
    LDMOS MMIC Amplifier from 2.11 to 2.2 GHz

General Parameters

  • Type
    Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell, DAS, Boosters/Repeaters, Mobile Infrastructure, Base Station
  • Standards Supported
    5G NR, 4G/LTE, WCDMA
  • Industry Application
    Cellular
  • Frequency
    2.11 to 2.2 GHz
  • Gain
    26.9 to 27.8 dB
  • Output Power
    30.97 to 40 dBm
  • Output Power
    1.25 to 10 W
  • Saturated Power
    40 dBm
  • Saturated Power
    10 W
  • PAE
    41.8 to 44.1%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    Doherty Amplifier
  • Input Return Loss
    -37.9 to 34.2 dB
  • Supply Voltage
    28 V
  • Quiscent Current
    26 mA
  • Technology
    LDMOS
  • Package Type
    Surface Mount
  • Package
    20 Pin LGA
  • Dimensions
    7 x 7 mm
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    ACPR @5MHz (dBc): -32.2 to -29.7 dBc, ACPR*@10MHz (dBc): -44.4 to -42.8 dBc

Technical Documents
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