HTE9G04P2K0H(B)

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HTE9G04P2K0H(B) Image

The HTE9G04P2K0H(B) from Watech Electronics is a Power Amplifier that operates from 1 to 400 MHz. It delivers a saturated output power of 2000 W (~63.01 dBm) with a gain of 29 dB and has an efficiency of 68 to 85%. This LDMOS-based amplifier has excellent thermal stability due to its low thermal resistance package and a rugged unmatched design. It requires a DC supply of 65 V. This amplifier is available in a flanged 4-lead air cavity package that measures 32.26 x 16.62 x 13 mm and is suitable for use in ISM band applications like laser generation, plasma generation, MRI, and particle accelerators.

Product Specifications

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Product Details

  • Part Number
    HTE9G04P2K0H(B)
  • Manufacturer
    Watech Electronics
  • Description
    2 kW LDMOS Power Amplifier from 1 to 400 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Magnetic Resonance Imaging (MRI), Plasma Generator
  • Standards Supported
    ISM Band
  • Industry Application
    Industrial, Medical
  • Frequency
    1 to 400 MHz
  • Gain
    27.30 to 30.10 dB
  • Output Power
    61.46 to 63.22 dBmn
  • Output Power
    1400 to 2100 W
  • Saturated Power
    63.05 dBm
  • Saturated Power
    2000 W
  • PAE
    68 to 85%
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uS
  • Duty Cycle
    10%
  • Supply Voltage
    65 V (Drain)
  • Quiscent Current
    100 mA
  • Technology
    LDMOS
  • Package Type
    Flanged, Ceramic, Surface Mount
  • Package
    ACC3210B-4L
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Current : 0.4 uA (Drain Leakage)

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