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HTH1D09P700S

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Product Specifications

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Product Details

  • Part Number
    HTH1D09P700S
  • Manufacturer
    Watech Electronics
  • Description
    700 W GaN Amplifier from 700 to 960 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, DAS, Boosters/Repeaters, Mobile Infrastructure
  • Standards Supported
    5G NR, 4G/LTE
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    700 to 960 MHz
  • Gain
    17.86 to 19.66 dB
  • Output Power
    50.49 to 58.45 dBm
  • Output Power
    112 to 700 W
  • Saturated Power
    58.45 dBm
  • Saturated Power
    700 W
  • PAE
    63.32 to 68.95%
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uS
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier, Push-Pull Amplifier, Doherty Amplifier
  • Return Loss
    10 to 20 dB
  • Input Return Loss
    10 to 20 dB
  • Supply Voltage
    48 V (Drain)
  • Quiscent Current
    350 mA
  • Transistor Technology
    GaN
  • Package Type
    Flanged, Surface Mount
  • Package
    ACS2110S-4L
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    Current : 36 mA (Drain Leakage)

Technical Documents
View details on the manufacturer's website
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