HTH1D27P550S

Product Specifications

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Type

Power Amplifier
Configuration

IC/MMIC/SMT
Application

Base Station, Boosters/Repeaters, DAS, Mobile Infrastructure
Display Application

3GPP 5G NR N41, 4G/LTE B41, Macro Base Stations, Repeaters/DAS, Mobile Infrastructure
Standards Supported

5G NR, 4G/LTE, WCDMA
Industry Application

Cellular, Wireless Infrastructure
Frequency

2469 to 2690 MHz
Gain

15.4 to 17 dB
Output Power

51.7 to 57.4 dBm
Output Power

147.9 to 550 W
P1dB

51.7 to 52.8 dBm
P1dB

147.9 to 190.5 W
Saturated Power

57.4 dBm
Saturated Power

550 W
PAE

54.6 to 65.4 %
Pulsed/CW

CW/Pulsed
Pulse Width

1 mS
Sub-Category

Doherty Amplifier, Pulsed Amplifier, GaN Amplifier
Supply Voltage

50 V (Drain)
Current Consumption

0.65 to 1.5 mA (Drain Leakage)
Quiscent Current

250 mA
Transistor Technology

GaN
Package Type

Flanged
Operating Temperature

-65 to 150 Degree C
Storage Temperature

-40 to 150 Degree C
RoHS

Yes