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HTH1D27P550S

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The HTH1D27P550S from Watech Electronics is a RF Amplifier with Frequency 2469 to 2690 MHz, Gain 15.4 to 17 dB, Output Power 51.7 to 57.4 dBm, Output Power 147.9 to 550 W, P1dB 51.7 to 52.8 dBm. Tags: Flanged, Power Amplifier. More details for HTH1D27P550S can be seen below.

Product Specifications

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Product Details

  • Part Number
    HTH1D27P550S
  • Manufacturer
    Watech Electronics
  • Description
    Power Amplifier from 2469 to 2690 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, Boosters/Repeaters, DAS, Mobile Infrastructure
  • Display Application
    3GPP 5G NR N41, 4G/LTE B41, Macro Base Stations, Repeaters/DAS, Mobile Infrastructure
  • Standards Supported
    5G NR, 4G/LTE, WCDMA
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    2469 to 2690 MHz
  • Gain
    15.4 to 17 dB
  • Output Power
    51.7 to 57.4 dBm
  • Output Power
    147.9 to 550 W
  • P1dB
    51.7 to 52.8 dBm
  • P1dB
    147.9 to 190.5 W
  • Saturated Power
    57.4 dBm
  • Saturated Power
    550 W
  • PAE
    54.6 to 65.4 %
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    1 mS
  • Sub-Category
    Doherty Amplifier, Pulsed Amplifier, GaN Amplifier
  • Supply Voltage
    50 V (Drain)
  • Current Consumption
    0.65 to 1.5 mA (Drain Leakage)
  • Quiscent Current
    250 mA
  • Transistor Technology
    GaN
  • Package Type
    Flanged
  • Operating Temperature
    -65 to 150 Degree C
  • Storage Temperature
    -40 to 150 Degree C
  • RoHS
    Yes

Technical Documents
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