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HTH1D38S010P

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The HTH1D38S010P from Watech Electronics is a RF Amplifier with Frequency 2.3 to 4 GHz, Gain 18.4 to 19.9 dB, Output Power 40 dBm, Output Power 10 W, Saturated Power 40 dBm. Tags: Surface Mount, Power Amplifier, Driver Amplifier. More details for HTH1D38S010P can be seen below.

Product Specifications

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Product Details

  • Part Number
    HTH1D38S010P
  • Manufacturer
    Watech Electronics
  • Description
    10 W GaN Amplifier from 2.3 to 4 GHz

General Parameters

  • Type
    Power Amplifier, Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station, DAS, Small Cell, Boosters/Repeaters
  • Standards Supported
    5G NR, 4G/LTE, 5G
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    2.3 to 4 GHz
  • Gain
    18.4 to 19.9 dB
  • Output Power
    40 dBm
  • Output Power
    10 W
  • Saturated Power
    40 dBm
  • Saturated Power
    10 W
  • PAE
    15.7 to 63.3%
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uS
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier
  • Return Loss
    10 to 12 dB
  • Input Return Loss
    10 to 12 dB
  • Supply Voltage
    48 V (Drain)
  • Quiscent Current
    20 mA
  • Transistor Technology
    GaN
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimensions
    4 x 4
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Current : 0.1 mA (Drain Leakage)

Technical Documents
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