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HTH8G02P1K4H(B)

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The HTH8G02P1K4H(B) from Watech Electronics is a RF Amplifier with Frequency 1.8 to 200 MHz, Gain 26.8 to 27.43 dB, Output Power 61.32 to 61.8 dBm, Output Power 1350 to 1510 W, Saturated Power 61.46 dBm. Tags: Flanged, Power Amplifier. More details for HTH8G02P1K4H(B) can be seen below.

Product Specifications

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Product Details

  • Part Number
    HTH8G02P1K4H(B)
  • Manufacturer
    Watech Electronics
  • Description
    LDMOS MMIC Amplifier from 1.8 to 200 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Medical, Scientific, Industrial, Mobile, Radio, Plasma Generator, Magnetic Resonance Imaging (MRI)
  • Display Application
    Plasma Generation, Particle Accelerators, RF Ablation and Skin Treatment, Industrial Heating, Welding and Drying Systems
  • Standards Supported
    ISM Band
  • Industry Application
    Cellular, Broadcast, Industrial
  • Frequency
    1.8 to 200 MHz
  • Gain
    26.8 to 27.43 dB
  • Output Power
    61.32 to 61.8 dBm
  • Output Power
    1350 to 1510 W
  • Saturated Power
    61.46 dBm
  • Saturated Power
    1400 W
  • PAE
    73 to 78%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uSec
  • Sub-Category
    Doherty Amplifier, Push-Pull Amplifier, Pulsed Amplifier
  • Supply Voltage
    50 V
  • Quiscent Current
    100 mA
  • Technology
    LDMOS
  • Package Type
    Flanged
  • Package
    4 Leads, 2 Mounting Holes
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Flanged balanced Air Cavity Ceramic Package : 4Leads, 2 Mounting holes

Technical Documents
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