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HTN7G09P200S

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The HTN7G09P200S from Watech Electronics is a RF Amplifier with Frequency 1.8 to 1000 MHz, Gain 18.39 to 22.64 dB, Output Power 48.92 to 53.41 dBm, Output Power 77.9 to 219.2 W, P1dB 48.92 to 53.41 dBm. Tags: Flanged, Surface Mount, Power Amplifier. More details for HTN7G09P200S can be seen below.

Product Specifications

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Product Details

  • Part Number
    HTN7G09P200S
  • Manufacturer
    Watech Electronics
  • Description
    200 W LDMOS Amplifier from 1.8 to 1000 MHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Avionics, Base Station, Plasma Generator, Magnetic Resonance Imaging (MRI), Communication
  • Standards Supported
    ISM Band
  • Industry Application
    Broadcast, Radar, Medical, Industrial
  • Frequency
    1.8 to 1000 MHz
  • Gain
    18.39 to 22.64 dB
  • Output Power
    48.92 to 53.41 dBm
  • Output Power
    77.9 to 219.2 W
  • P1dB
    48.92 to 53.41 dBm
  • P1dB
    77.9 to 219.2 W
  • Saturated Power
    53.01 dBm
  • Saturated Power
    200 W
  • PAE
    45.10 to 68.75%
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    100 uS
  • Duty Cycle
    10%
  • Supply Voltage
    20 to 28 V (Drain)
  • Quiscent Current
    600 mA
  • Technology
    LDMOS
  • Package Type
    Flanged, Surface Mount
  • Package
    ACS2110S-4L
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Current : 10 uA (Drain Leakage)

Technical Documents
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