Note : Your request will be directed to United Monolithic Semiconductors.

The CHE1260 from United Monolithic Semiconductors is a RF Detector with Frequency 10 to 27 GHz, Max Input Power -8 to 18 dBm, Dynamic Range 20 dB, Supply Voltage 4.5 V, Current 25 to 45 µA(Bias Current). Tags: Chip, Diode Detector. More details for CHE1260 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHE1260
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    10 to 27 GHz Bi-directionnal Detector GaAs Monolithic Microwave IC

General Parameters

  • Type
    Diode Detector
  • Application
    Commercial
  • Frequency
    10 to 27 GHz
  • Max Input Power
    -8 to 18 dBm
  • Dynamic Range
    20 dB
  • Diode Type
    Schottky Diode
  • Supply Voltage
    4.5 V
  • Current
    25 to 45 µA(Bias Current)
  • Insertion Loss
    0.8 dB
  • Nominal Bias
    Biased
  • Return Loss
    -11 to -8 dB
  • Package Type
    Chip
  • Dimension
    1.41 x 1.41 x 0.1 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Technology : GaAs