The SiT5812 from SiTime is a MEMS based Oven-Controlled Crystal Oscillator that operates from 60 to 220 MHz. It provides LVCMOS or clipped sinewave output with a frequency stability of ±1 ppb (from -40 to 95°C). This oscillator has a frequency slope (?F/?T) of ±0.01 ppb/°C to ensure system-level quality of service for telecom and networking equipment in hostile environments. It is resilient to thermal shock, airflow, and vibration with excellent phase noise under vibration to minimize call and/or link drops in high-vibration environments. The OCXO requires a DC supply of 2.5/2.8/3.3 V and consumes 460 mW of power. It has on-chip power-supply noise filtering for excellent PSNR and reduces BOM by eliminating a dedicated LDO for OCXO.
The SiT5812 simplifies and expedites the design process with 25x less volume and 3x lower power, in addition to leading environmental resilience which eliminates the need for a protective cover. It is available in a package that measures 9.0 x 7.0 x 3.6 mm and supports digital frequency tuning through I2C and SPI interfaces. This oscillator is optimized for best balance between EMI and jitter and is ideal for use in 5G infrastructure, 4G/5G RRH, ITU-T G.8273.2 Class D, small cells, data center, switches and routers, core and edge routers, optical transport (OTN, OLT, etc.), timing servers, test and measurement, IEEE 1588 boundary clocks and grandmasters, SONET/SDH Stratum 3E and GNSS disciplined timing modules.
