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BAR63-03W

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The BAR63-03W from Infineon Technologies is a RF PIN Diode with Frequency Up to 3 GHz, Insertion Loss 0.1 to 0.15 dB, Isolation 10 to 17.9 dB, Forward Voltage 0.95 to 1.2 V, Forward Current 100 mA. Tags: Flatpack. More details for BAR63-03W can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAR63-03W
  • Manufacturer
    Infineon Technologies
  • Description
    Silicon PIN Diode with 100 mA of forward current

General Parameters

  • Application
    Switch
  • Frequency
    Up to 3 GHz
  • Configuration
    Single Diode
  • Insertion Loss
    0.1 to 0.15 dB
  • Isolation
    10 to 17.9 dB
  • Forward Voltage
    0.95 to 1.2 V
  • Forward Current
    100 mA
  • Reverse Voltage
    50 V
  • Reverse Current
    0.01 uA
  • Power Dissipation
    250 mW
  • Parallel Resistance
    5 to 500 Kohms(Reverse)
  • Thermal Resistance
    155 K/W
  • Forward Resistance
    1 to 2 Ohms
  • Series Inductance
    1.8 nH
  • Capacitance
    0.21 to 0.3 pF
  • Junction Temperature
    150 Degree C
  • Charge Carrier Life Time
    75 ns
  • I-Region Width
    4.5 um
  • No. of Diodes
    1
  • Package Type
    Flatpack
  • Package
    SOD323
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents
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