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BAR81W

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The BAR81W from Infineon Technologies is a RF PIN Diode with Forward Voltage 0.93 to 1 V, Forward Current 100 mA, Reverse Voltage 30 V, Reverse Current 0.02 uA, Power Dissipation 100 mW. Tags: Flatpack. More details for BAR81W can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAR81W
  • Manufacturer
    Infineon Technologies
  • Description
    Silicon PIN Diode with 100 mA of forward current

General Parameters

  • Application
    Switch
  • Configuration
    Shunt, Single Diode
  • Forward Voltage
    0.93 to 1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    30 V
  • Reverse Current
    0.02 uA
  • Power Dissipation
    100 mW
  • Thermal Resistance
    120 K/W
  • Forward Resistance
    0.7 to 1 Ohms
  • Series Inductance
    0.15 nH
  • Capacitance
    0.57 to 1 pF
  • Junction Temperature
    150 Degree C
  • Charge Carrier Life Time
    80 Ns
  • I-Region Width
    3.5 um
  • No. of Diodes
    1
  • Package Type
    Flatpack
  • Package
    SOT343
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents
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