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BAR90-02EL

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The BAR90-02EL from Infineon Technologies is a RF PIN Diode with Frequency 1 GHz, Insertion Loss 0.08 to 0.16 dB, Isolation 11.5 to 18.5 dB, Forward Voltage 0.75 to 1 V, Forward Current 100 mA. Tags: Flatpack. More details for BAR90-02EL can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAR90-02EL
  • Manufacturer
    Infineon Technologies
  • Description
    Silicon Deep Trench PIN Diodes with 100 mA of forward current

General Parameters

  • Application
    Switch
  • Frequency
    1 GHz
  • Configuration
    Single Diode
  • Insertion Loss
    0.08 to 0.16 dB
  • Isolation
    11.5 to 18.5 dB
  • Forward Voltage
    0.75 to 1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    80 V
  • Reverse Current
    0.05 uA
  • Power Dissipation
    250 mW
  • Parallel Resistance
    4 to 35 Kohms(Reverse)
  • Thermal Resistance
    65 K/W
  • Forward Resistance
    0.8 to 2.3 Ohms
  • Series Inductance
    0.4 nH
  • Capacitance
    0.18 to 0.35 pF
  • Junction Temperature
    150 Degree C
  • Charge Carrier Life Time
    750 ns
  • I-Region Width
    20 um
  • No. of Diodes
    1
  • Package Type
    Flatpack
  • Package
    TSLP-2-19
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
View details on the manufacturer's website
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