The BAP50-04W from NXP Semiconductors is a RF PIN Diode with Forward Voltage 0.95 to 1.1 V, Forward Current 50 mA, Reverse Voltage 50 V, Reverse Current 0.1 uA, Power Dissipation 240 mW. Tags: Surface Mount. More details for BAP50-04W can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAP50-04W
  • Manufacturer
    NXP Semiconductors
  • Description
    General purpose PIN diode with 50 mA of forward current

General Parameters

  • Application Industry
    General Purpose
  • Configuration
    In Series
  • Forward Voltage
    0.95 to 1.1 V
  • Forward Current
    50 mA
  • Reverse Voltage
    50 V
  • Reverse Current
    0.1 uA
  • Power Dissipation
    240 mW
  • Thermal Resistance
    250 K/W
  • Forward Resistance
    3 to 40 Ohms
  • Series Inductance
    1.6 nH
  • Capacitance
    0.3 to 0.6 pF
  • Junction Temperature
    -65 to 150 Degree C
  • Charge Carrier Life Time
    1.5 us
  • No. of Diodes
    2
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Storage Temperature
    -65 to 150 Degree C

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